rf01103- 1, rev. a (09/01/15) ?2015 microsemi corporation page 1 of 5 mupt5e3 C mupt48 e3 and muptb5 e3 C muptb48e3 available 5v C 48v powermite1, surface mount transient voltage suppressors high-reliability screening available in reference to mil -prf-19500 tested in accordance with the requirements of aec -q101 do -216aa package description microsemis unique and new powermite mupt series of transient voltage suppressors feature oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible electrical degradation under repeated surge conditions. both unidirectional and bidirectional configurations are available. in addition to its size advantages, the powermite package includes a fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at assembly and a unique locking tab design serves as an integral heat sink. its innovative design makes this device fully compatible for use with automatic insertion equipment. important: for the latest information, visit our website http://www.microsemi.com . features ? powermite package with standoff voltages 5 to 48 v. ? both unidirectional and bidirectional polarities: -anode to case bottom (mupt5e3 thru mupt48e3) -bidirectional (muptb 5e 3 thru muptb48e3) ? clamping time less than 100 pico-seconds for unidirectional a nd 5 nano-seconds for bidirectional. ? 100% surge current testing of all parts. ? moisture classification is level 1 with no dry pack required per ipc/jedec j-std-020b. ? both rohs and non-rohs compliant versions available. applications / benefits ? protects sensitive components such as ics, cmos, bipolar, bicmos, ecl, dtl , t 2 l, etc. ? protection from switching and induced rf transients. -integral heat sink / locking tabs -fully metallic bottom side eliminates flux entrapment ? compliant to iec61000-4-2 and iec61000-4-4 for esd and eft protection resp ectively. ? secondary lightning protection per iec61000-4-5 with 42 ohms source impedance: class 1: mupt5 /muptb8 to 17 class 2: mupt5 /muptb5 to 12 maximum ratings power discretes & modules business unit discrete products group microsemi corporation pdm C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 -1158 or (978) 620-2600 fax: (978) 689- 0803 pdm C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j / t stg -65 to +150 o c thermal resistance junction- to -ambient (1) r ?ja 240 o c /w thermal resistance junction- to -case (base tab) r ?j c 15 o c /w peak pulse power (see figure 1 and figure 2 ) @ 8/20 s @10/1000s mupt5e3 thru mupt48e3: muptb5e3 thru muptb48e3: p pp 1000 1000 150 150 w rated average power dissipation (base tab < 112 o c) p m(av) 2.5 w impulse repetition rate (duty factor) 0.01 % solder temperature @ 10 s t sp 260 o c notes: 1. when mounted on fr4 pc board with 1 oz copper. downloaded from: http:///
rf01103- 1, rev. a (09/01/15) ?2015 microsemi corporation page 2 of 5 mupt5e3 C mupt48 e3 and muptb5 e3 C muptb48e3 mechanical and packaging ? case: void-free transfer molded thermosetting epoxy compound meeting ul 94v-0. ? terminals: annealed matte-t in plating over copper and readily solderable per mil-std-750, method 2 026. ? marking: anode to tab 1 : t plus the last two digits of part number underlined, e.g. mupt5e 3 is t05 ? , mupt12e3 is t12 ? bipolar : b plus the last two digits of part number underlined, e.g. muptb8 e3 is b08 ? , muptb12e3 is b12 ? , etc. please note dot suffix (for e3 suffix) ? polarity: anode to tab 1 (bottom) as described in marking above and on last page . ? tape & reel option: standard per eia- 481 -b using 12 mm tape. consult factory for quantities. ? weight: approximately 0.016 gram. ? see package dimensions on last page. part nomenclature applicable to unidirectional mupt5e3 C mupt48e3 only: m upt 5 (e3) reliability level* m ma mx mxl *(see hi -rel non- hermetic product portfolio ) powermite rohs compliance e3 = rohs compliant blank = non-rohs compliant rated standoff voltage 5v - 48v applicable to bidirectional muptb5e3 C muptb48e3 only: m upt b 5 (e3) reliability level* m ma mx mxl *(see hi -rel non- hermetic product portfolio ) powermite bi -directional rohs compliance e3 = rohs compliant blank = non-rohs compliant rated standoff voltage 5v - 48v downloaded from: http:///
rf01103- 1, rev. a (09/01/15) ?2015 microsemi corporation page 3 of 5 mupt5e3 C mupt48 e3 and muptb5 e3 C muptb48e3 electrical characteristics device type rated standoff voltage v wm minimum breakdown voltage v (br) @ 1 ma maximum standby current i d @ v wm maximum peak pulse current* i pp @ 10/1000 ? s maximum clamping voltage v c @ i pp maximum temperature coefficient of v (br) v(br) uni-directional bi -directional v v ? a a v %/ o c mupt5 muptb5 5 6.0 50 15.7 9.5 0.030 mupt8 muptb8 8 9.0 2 10.9 13.7 0.040 mupt10 muptb10 10 11.0 2 8.33 18.0 0.045 mupt12 muptb12 12 13.8 1 6.94 21.6 0.050 mupt15 muptb15 15 16.7 1 5.77 26.0 0.055 mupt17 muptb17 17 19.0 1 5.14 29.2 0.060 mupt24 muptb24 24 28.4 1 3.47 43.2 0.070 mupt28 muptb28 28 31.0 1 3.13 47.8 0.075 mupt33 muptb33 33 36.8 1 2.65 56.7 0.080 mupt48 muptb48 48 54.0 1 1.78 84.3 0.090 * see figure 2 for i pp waveform of 10 / 1000 s test pulse . symbols & definitions symbol definition v (br) breakdown voltage: the minimum voltage the device will exhibit at a specified current. v wm working peak standoff voltage: the maximum peak voltage that can b e applied over the operating temperature range. p pp peak pulse power: the peak power that can be applied for a specified pulse width and waveform. i d standby current: the maximum current that will flow at the specified v oltage and temperature. i pp peak pulse current: the peak current that can be applied for a specifie d pulse width and waveform. c capacitance: the capacitance in picofarads of the tvs as defined @ 0 vo lts at a frequency of 1 mhz. downloaded from: http:///
rf01103- 1, rev. a (09/01/15) ?2015 microsemi corporation page 4 of 5 mupt5e3 C mupt48 e3 and muptb5 e3 C muptb48e3 graphs figure 1 figure 2 peak pulse power vs. pulse duration pulse waveform for 10/1000 ? s exponential surge temperature C ( o c) v wm C stand-off voltage C (v) figure 3 figure 4 derating curve typical capacitance vs. stand-off voltage p pp C peak pulse power C (kw) capacitance C (pf) p pp C peak pulse power C (% of 25 o c rating) measured at zero bias measured at v wm exponential pulse (pulse time duration is defined as that point where the pulse current decays to 50% of i pp .) tp: pulse duration is defined as that point where current decays to 50% of i pp and tr = 10 s l p C pulse current C (% of i pp ) tp C pulse time (ms) t- time- (ms) downloaded from: http:///
rf01103- 1, rev. a (09/01/15) ?2015 microsemi corporation page 5 of 5 mupt5e3 C mupt48 e3 and muptb5 e3 C muptb48e3 package dimensions dimensions ltr inch millimeters min max min max a 0.029 0.039 0.73 0.99 b 0.016 0.026 0.40 0.66 c 0.070 0.080 1.77 2.03 d 0.087 0.097 2.21 2.46 e 0.020 0.030 0.50 0.76 f 0.051 0.061 1.29 1.54 g 0.021 0.031 0.53 0.78 h 0.004 0.008 0.10 0.20 i 0.070 0.080 1.77 2.03 j 0.035 0.045 0.89 1.14 pad layout dimensions ltr inch millimeters a 0.100 2.54 b 0.105 2.67 c 0.050 1.27 d 0.030 0.76 e 0.025 0.64 locking tab downloaded from: http:///
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